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Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile

Crossref DOI link: https://doi.org/10.1007/s00542-016-3221-8

Published Online: 2016-12-07

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wei, Sufen

Zhang, Guohe

Huang, Huixiang

Liu, Jing

Shao, Zhibiao

Geng, Li

Yang, Cheng-Fu
Funding

Funding for this research was provided by:

Provincial Natural Science Foundation of Fujian, China (2016J01313, 2016J05159, 2015J01265)

National Natural Science Foundation of China (61306111, 61504047, 61505068)

Program for Top Youth Talents in Universities of Fujian Province (TYTFJ 2015)

Program for New Century Excellent Talents in University of Fujian Province (NCETFJ 2016)
License Information

License valid from 2016-12-07