Investigation of parasitic capacitances of In2O5Sn gate electrode recessed channel MOSFET for ULSI switching applications
Crossref DOI link: https://doi.org/10.1007/s00542-017-3348-2
Published Online: 2017-03-07
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Ajay
Tripathi, M. M.
Chaujar, Rishu
License valid from 2017-03-07
