Development of noise model for InAsSb MOSFETs and their application in low noise amplifiers
Crossref DOI link: https://doi.org/10.1007/s00542-017-3466-x
Published Online: 2017-06-13
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bhattacherjee, Swagata
Biswas, Abhijit
Text and Data Mining valid from 2017-06-13
Article History
Received: 30 September 2016
Accepted: 6 June 2017
First Online: 13 June 2017