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Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ memory device

Crossref DOI link: https://doi.org/10.1007/s00542-018-3728-2

Published Online: 2018-01-19

Published Print: 2019-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sharma, Bikash https://orcid.org/0000-0003-2013-9686
Mukhopadhyay, Arnab

Banerjee, Lopamudra

Sengupta, Amretashis

Rahaman, Hafizur

Sarkar, C. K.
Funding

Funding for this research was provided by:

All India Council for Technical Education (A-1/RS/14/14)

All India Council for Technical Education (JU)

All India Council for Technical Education (8-206/RIFD/RPS/POLICY-1/2014-15)

Department of Science and Technology, Ministry of Science and Technology (IFA-13 ENG-62)

University Grants Commission (UPE II 2016-17)
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Article History

Received: 25 July 2017

Accepted: 11 January 2018

First Online: 19 January 2018