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Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate

Crossref DOI link: https://doi.org/10.1007/s00542-018-3903-5

Published Online: 2018-04-20

Published Print: 2019-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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