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Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness

Crossref DOI link: https://doi.org/10.1007/s00542-018-4113-x

Published Online: 2018-09-11

Published Print: 2022-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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