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An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers

Crossref DOI link: https://doi.org/10.1007/s00542-018-4227-1

Published Online: 2018-12-01

Published Print: 2021-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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