Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps
Crossref DOI link: https://doi.org/10.1007/s00542-019-04322-5
Published Online: 2019-01-28
Published Print: 2022-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chugh, Nisha http://orcid.org/0000-0002-4443-1625
Kumar, Manoj
Bhattacharya, Monika
Gupta, R. S.
Funding for this research was provided by:
Defence Research and Development Organisation (ERIP/P/ER/DG-Med, CoS/991115506/M/01/1663)
Text and Data Mining valid from 2019-01-28
Version of Record valid from 2019-01-28
Article History
Received: 31 July 2018
Accepted: 19 January 2019
First Online: 28 January 2019