Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT
Crossref DOI link: https://doi.org/10.1007/s00542-019-04324-3
Published Online: 2019-01-24
Published Print: 2022-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Panda, D. K. http://orcid.org/0000-0001-8835-3908
Lenka, T. R.
Text and Data Mining valid from 2019-01-24
Version of Record valid from 2019-01-24
Article History
Received: 31 July 2018
Accepted: 19 January 2019
First Online: 24 January 2019