Design and performance analysis of 70 nm GaN HEMT with AlGaN back barrier for V-band nanoelectronics applications
Crossref DOI link: https://doi.org/10.1007/s00542-025-05931-z
Published Online: 2025-08-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pattnaik, Geeta
Mohapatra, Meryleen
Mohanty, Bibhuprasad
Text and Data Mining valid from 2025-08-12
Version of Record valid from 2025-08-12
Article History
Received: 23 June 2025
Accepted: 28 July 2025
First Online: 12 August 2025
Declarations
:
: The authors declare that they have no conflict of interest.