Crossmark

Structural, electronic, and optical properties of the gallium nitride semiconductor by means of the FP-LAPW method

Published Online: 2020-11-27

Published Print: 2020-12

Authors

Gasmi, F. Z.

Chemam, R.

Graine, R.

Boubir, B.

Meradji, H.
License Information

Text and Data Mining valid from 2020-11-27

Version of Record valid from 2020-11-27
More Information

Article History

Received: 30 July 2020

Accepted: 16 November 2020

First Online: 27 November 2020

Compliance with ethical standards

:

: The authors declare that they have no conflicts of interest.

: N/A

: N/A

: N/A

: N/A

Document is current