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Radiation-induced single event effects in vertically prolonged drain dual gate Si$$_{0.5}$$Ge$$_{0.5}$$ source TFET

Crossref DOI link: https://doi.org/10.1007/s00894-025-06488-4

Published Online: 2025-09-09

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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