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Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

Crossref DOI link: https://doi.org/10.1007/s10338-018-0013-y

Published Online: 2018-03-07

Published Print: 2018-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Usman, Muhammad

Saba, Kiran

Jahangir, Adnan

Kamran, Muhammad

Muhammad, Nazeer
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Text and Data Mining valid from 2018-03-07
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Article History

Received: 26 August 2017

Revised: 18 October 2017

Accepted: 2 November 2017

First Online: 7 March 2018

Change Date: 22 November 2018

Change Type: Correction

Change Details: In all the articles in Acta Mechanica Solida Sinica , Volume 31, Issues 1–4, the copyright is incorrectly displayed as “The Chinese Society of Theoretical and Applied Mechanics and Technology ” where it should be “The Chinese Society of Theoretical and Applied Mechanics”.