An RF switch design with adaptive DNW biasing in triple-well devices in 0.18-µm CMOS technology
Crossref DOI link: https://doi.org/10.1007/s10470-016-0735-z
Published Online: 2016-04-05
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Woo, Sanghyun
Kim, Hyoungsoo
Kim, Hyun-woong
Laskar, Joy
Text and Data Mining valid from 2016-04-05