A robust and low-power near-threshold SRAM in 10-nm FinFET technology
Crossref DOI link: https://doi.org/10.1007/s10470-018-1107-7
Published Online: 2018-01-22
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ensan, Sina Sayyah
Moaiyeri, Mohammad Hossein http://orcid.org/0000-0001-9711-7923
Hessabi, Shaahin
License valid from 2018-01-22