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DS pOTFT 8T: Analysis of Dual data aware SRAM cell employing pentacene ditch formation on BGBC OTFT and LaxNb(1-x) Oy layer for high-speed, low-leakage flexible computing devices

Crossref DOI link: https://doi.org/10.1007/s10470-025-02461-6

Published Online: 2025-08-02

Published Print: 2025-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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