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Heterojunction (SiGe/Si) triple metal dual gate extended source tunnel FET for improved DC, noise and linearity performance

Crossref DOI link: https://doi.org/10.1007/s10470-025-02492-z

Published Online: 2025-09-04

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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