Triple metal gate vertical TFET with SiGe/Si heterojunction for high-performance and low-power VLSI circuits
Crossref DOI link: https://doi.org/10.1007/s10470-026-02582-6
Published Online: 2026-04-04
Published Print: 2026-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mohanta, Debasish
Singh, Sruti Suvadarsini
Sahu, Prasanna Kumar
Text and Data Mining valid from 2026-04-01
Version of Record valid from 2026-04-01
Article History
Received: 15 December 2025
Revised: 15 February 2026
Accepted: 20 March 2026
First Online: 4 April 2026
Declarations
:
: The authors declare no competing interests.