Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers
Crossref DOI link: https://doi.org/10.1007/s10765-014-1603-7
Published Online: 2014-04-26
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ren, Shengdong
Li, Bincheng
Wang, Qian
Text and Data Mining valid from 2014-04-26
