Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
Crossref DOI link: https://doi.org/10.1007/s10825-014-0602-z
Published Online: 2014-08-06
Published Print: 2014-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lakhdar, N.
Text and Data Mining valid from 2014-08-06
