Physical model for electroforming process in valence change resistive random access memory
Crossref DOI link: https://doi.org/10.1007/s10825-014-0634-4
Published Online: 2014-10-22
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sun, Pengxiao
Li, Ling
Lu, Nianduan
Lv, Hangbing
Liu, Ming
Liu, Su
Text and Data Mining valid from 2014-10-22