Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET
Crossref DOI link: https://doi.org/10.1007/s10825-015-0715-z
Published Online: 2015-06-18
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gupta, Neha
Kumar, Ajay
Chaujar, Rishu
Text and Data Mining valid from 2015-06-18
