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Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Crossref DOI link: https://doi.org/10.1007/s10825-015-0738-5

Published Online: 2015-08-07

Published Print: 2016-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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