A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage
Crossref DOI link: https://doi.org/10.1007/s10825-015-0743-8
Published Online: 2015-08-30
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ramezani, Zeinab
Orouji, Ali A.
Agharezaei, Hassan
Text and Data Mining valid from 2015-08-30