A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs
Crossref DOI link: https://doi.org/10.1007/s10825-015-0755-4
Published Online: 2015-10-07
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sho, Shohiro
Odanaka, Shinji
Hiroki, Akira
License valid from 2015-10-07