A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region
Crossref DOI link: https://doi.org/10.1007/s10825-015-0785-y
Published Online: 2016-01-04
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zareiee, Meysam
Orouji, Ali A.
Mehrad, Mahsa
Text and Data Mining valid from 2016-01-04