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Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications

Crossref DOI link: https://doi.org/10.1007/s10825-016-0798-1

Published Online: 2016-02-29

Published Print: 2016-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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