Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance
Crossref DOI link: https://doi.org/10.1007/s10825-016-0803-8
Published Online: 2016-03-21
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Verma, Jay Hind Kumar
Haldar, Subhasis
Gupta, R. S.
Gupta, Mridula
Funding for this research was provided by:
University Grant Commission, India (4010/(NET-JUNE 2013))
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