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Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications

Crossref DOI link: https://doi.org/10.1007/s10825-016-0808-3

Published Online: 2016-02-29

Published Print: 2016-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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