Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
Crossref DOI link: https://doi.org/10.1007/s10825-016-0819-0
Published Online: 2016-04-04
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tiwari, Pramod Kumar
Samoju, Visweswara Rao
Sunkara, Thandva
Dubey, Sarvesh
Jit, Satyabrata
Funding for this research was provided by:
Defence Research and Development Organisation (CC/TM/ERIPR/GIA/1516/020)
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