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First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$, $$\hbox {CeO}_{ x}$$, and at their interfaces for applications in resistive random-access memories

Crossref DOI link: https://doi.org/10.1007/s10825-016-0847-9

Published Online: 2016-06-16

Published Print: 2016-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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