Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications
Crossref DOI link: https://doi.org/10.1007/s10825-016-0874-6
Published Online: 2016-08-09
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Orouji, Ali A.
Roustaie, Zohreh
Ramezani, Zeinab
License valid from 2016-08-09
