20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
Crossref DOI link: https://doi.org/10.1007/s10825-016-0884-4
Published Online: 2016-08-16
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ajayan, J.
Nirmal, D.
License valid from 2016-08-16