Asymmetric junctionless nanowire TFET with built-in $${n}^{+}$$ n + source pocket emphasizing on energy band modification
Crossref DOI link: https://doi.org/10.1007/s10825-016-0895-1
Published Online: 2016-09-16
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rahimian, Morteza
Fathipour, Morteza
License valid from 2016-09-16