Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration
Crossref DOI link: https://doi.org/10.1007/s10825-016-0896-0
Published Online: 2016-09-20
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sadeghi, H.
Mostajabodavati, S. M.
Eshaghi, A.
Rahi, D.
Funding for this research was provided by:
University Institute of Applied Science (UIAS-R-234-1392)
License valid from 2016-09-20