High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics
Crossref DOI link: https://doi.org/10.1007/s10825-016-0916-0
Published Online: 2016-11-08
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hlali, Slah
Hizem, Neila
Kalboussi, Adel
License valid from 2016-11-08
