Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications
Crossref DOI link: https://doi.org/10.1007/s10825-016-0933-z
Published Online: 2016-11-15
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bhattacharyya, A.
Ramesh, R.
License valid from 2016-11-15
