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Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications

Crossref DOI link: https://doi.org/10.1007/s10825-016-0942-y

Published Online: 2017-01-07

Published Print: 2017-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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