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Improved device performance in a CNTFET using La $$_{2}$$ 2 O $$_{3}$$ 3 high- $$\kappa $$ κ dielectrics

Crossref DOI link: https://doi.org/10.1007/s10825-017-0964-0

Published Online: 2017-02-27

Published Print: 2017-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy