Simulation of thin-TFETs using transition metal dichalcogenides: effect of material parameters, gate dielectric on electrostatic device performance
Crossref DOI link: https://doi.org/10.1007/s10825-017-0978-7
Published Online: 2017-03-21
Published Print: 2017-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Datta, Kanak
Khosru, Quazi D. M.
License valid from 2017-03-21
