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Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications

Crossref DOI link: https://doi.org/10.1007/s10825-017-0988-5

Published Online: 2017-05-06

Published Print: 2017-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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