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$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Crossref DOI link: https://doi.org/10.1007/s10825-017-0991-x

Published Online: 2017-05-06

Published Print: 2017-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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