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3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects

Crossref DOI link: https://doi.org/10.1007/s10825-017-1002-y

Published Online: 2017-05-23

Published Print: 2017-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy