An improved model for the $${I{-}V}$$ I - V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel
Crossref DOI link: https://doi.org/10.1007/s10825-017-1010-y
Published Online: 2017-06-17
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ahmed, M. M.
Riaz, M.
Ahmed, U. F.
License valid from 2017-06-17