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2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Crossref DOI link: https://doi.org/10.1007/s10825-017-1011-x

Published Online: 2017-06-05

Published Print: 2017-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy