Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high $$\kappa $$ κ dielectric material in electrically doped TFET: proposal and optimization
Crossref DOI link: https://doi.org/10.1007/s10825-017-1019-2
Published Online: 2017-06-09
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yadav, Shivendra http://orcid.org/0000-0002-2955-1944
Sharma, Dheeraj
Soni, Deepak
Aslam, Mohd.
License valid from 2017-06-09