Crossmark

$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

Crossref DOI link: https://doi.org/10.1007/s10825-017-1074-8

Published Online: 2017-10-10

Published Print: 2017-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Villena, Marco A.

Roldán, Juan B.

Jiménez-Molinos, Francisco

Miranda, Enrique

Suñé, Jordi

Lanza, Mario https://orcid.org/0000-0003-4756-8632
Funding

Funding for this research was provided by:

Young 1000 Global Talent Recruitment Program of the Ministry of Education of China

National Natural Science Foundation of China (61502326, 41550110223)

National Natural Science Foundation of China (11661131002)

Government of Jiangsu Province (BK20150343)

Ministry of Finance of China (SX21400213)

Young 973 National Program of the Chinese Ministry of Science and Technology (2015CB932700)
License Information

License valid from 2017-10-10