Analytical model of hot carrier degradation in uniaxial strained triple-gate FinFET for circuit simulation
Crossref DOI link: https://doi.org/10.1007/s10825-017-1083-7
Published Online: 2017-10-04
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sriram, S. R.
Bindu, B.
Funding for this research was provided by:
Science and Engineering Research Board (SERB/F/8492/2015-16)
License valid from 2017-10-04