Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software
Crossref DOI link: https://doi.org/10.1007/s10825-018-01292-1
Published Online: 2018-12-19
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khan, M. N.
Ahmed, U. F.
Ahmed, M. M.
Rehman, S.
Text and Data Mining valid from 2018-12-19
Article History
First Online: 19 December 2018