Improvement in electrostatic characteristics of doped TFETs by hole layer formation
Crossref DOI link: https://doi.org/10.1007/s10825-018-1139-3
Published Online: 2018-03-23
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Soni, Deepak http://orcid.org/0000-0002-5127-3477
Sharma, Dheeraj
Aslam, Mohd.
Yadav, Shivendra
Text and Data Mining valid from 2018-03-23
Article History
First Online: 23 March 2018